| 2023-10 |
Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices |
Materials Advances
|
| 2022-05 |
Flexible and Transparent Electrode Based on Ag-Nanowire Embedded Colorless Poly(amide-imide) |
NANOMATERIALS
|
| 2021-01 |
Soft X-ray spectroscopic study on the electronic structure of WO3 thin films fabricated under various annealing temperature and gas flow conditions |
CURRENT APPLIED PHYSICS
|
| 2020-12 |
High-performance non-volatile resistive switching memory based on a polyimide/graphene oxide nanocomposite |
POLYMER CHEMISTRY
|
| 2020-11 |
Ni-Cu Nanoparticles-Embedded Ag-Based Reflector for High-Efficiency Light-Emitting Diodes |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2020-11 |
Flexible Transparent Electrode Characteristics of Graphene Oxide/Cysteamine/AgNP/AgNW Structure |
NANOMATERIALS
|
| 2020-01 |
Quantitative analysis of adsorption and desorption of volatile organic compounds on reusable zeolite filters using gas chromatography |
PLOS ONE
|
| 2019-01 |
Highly efficient, flexible, and recyclable air filters using polyimide films with patterned thru-holes fabricated by ion milling |
APPLIED SCIENCES-BASEL
|
| 2018-09 |
High Reliability of Ag Reflectors with AgCu Alloy for High Efficiency GaN-Based Light Emitting Diodes |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2018-08 |
Preparation of polyimide/graphene oxide nanocomposite and its application to nonvolatile resistive memory device |
POLYMERS
|
| 2018-02 |
Electronic structure of C60/zinc phthalocyanine/V2o5 interfaces studied using photoemission spectroscopy for organic photovoltaic applications |
MOLECULES
|
| 2017-11 |
SiO2/ITO nanostructure fabricated by nano-lithography using a self-arrayed colloidal monolayer |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2017-07 |
A study of Physically Implanted Surface Islands by direct Nd:YAG Laser Beam Irradiation |
ASCT(Applied Science and Convergence Technology)
|
| 2017-05 |
Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2017-02 |
Flexibility and non-destructive conductivity measurements of Ag nanowire based transparent conductive films via terahertz time domain spectroscopy |
OPTICS EXPRESS
|
| 2017-01 |
Fully Transparent, Non-volatile Bipolar Resistive Memory Based on Flexible Copolyimide Films |
ELECTRONIC MATERIALS LETTERS
|
| 2016-10 |
Interfacial electronic structure of C<inf>60</inf>/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications |
CHEMICAL PHYSICS
|
| 2016-04 |
Fully transparent nonvolatile resistive polymer memory |
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY
|
| 2015-05 |
Enhanced light extraction efficiency of GaN-based LED fabricated by multi-chip array |
OPTICAL MATERIALS EXPRESS
|
| 2015-03 |
An Ni/Ga-doped ZnO layer as a transparent p-type ohmic contact for GaN-based light-emitting diodes |
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
|
| 2014-07 |
Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive Device |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2014-03 |
Al-Doped ZnO as a Switching Layer for Transparent Bipolar Resistive Switching Memory |
ELECTRONIC MATERIALS LETTERS
|
| 2014-01 |
The Effect of Oxide Layer Vacancies on Switching Behavior in Oxide Resistive Devices |
ELECTRONIC MATERIALS LETTERS
|
| 2013-11 |
Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching |
OPTICS EXPRESS
|
| 2013-09 |
High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2012-12 |
Enhanced light output power of GaN-based LEDs by wet-chemically grown ZnO nanorods |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2012-07 |
High Efficiency GaN-Based Light Emitting Diode with Nano-Patterned ZnO Surface Fabricated by Wet Process |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2012-01 |
Adiabatic Cooling of a One-component Plasma in an Annular Penning Trap |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2011-12 |
Resistive Switching Property of Copper Sulfide and its Dependence on Electrode |
ELECTRONIC MATERIALS LETTERS
|
| 2011-09 |
In situ observation of vacancy dynamics during resistance changes of oxide devices |
JOURNAL OF APPLIED PHYSICS
|
| 2011-08 |
In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory |
ADVANCED MATERIALS
|
| 2011-06 |
Structural, optical, and electrical properties of E-beam and sputter-deposited ITO films for LED applications |
ELECTRONIC MATERIALS LETTERS
|
| 2011-02 |
Multibit Operation of Cu/Cu-GeTe/W Resistive Memory Device Controlled by Pulse Voltage Magnitude and Width |
IEEE ELECTRON DEVICE LETTERS
|
| 2011-01 |
Synaptic behaviors of a single metal-oxide-metal resistive device |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2010-07 |
Novel MgO/SiO2 double protective layers to prevent Ag mirror degradation |
European Physical Journal-Applied Physics
|
| 2010-02 |
Demonstration of ultra-high-resolution MFM images using Co90Fe10-coated CNT probes |
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
|
| 2010-01 |
A Serial Optical Link Based Memory Test System for High-Speed and Multi-Parallel Test |
JOURNAL OF LIGHTWAVE TECHNOLOGY
|
| 2009-08 |
Temperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells |
Journal of Applied Physics
|
| 2007-11 |
Enhancement of pumping efficiency in a vertical-external-cavity surface-emitting laser |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2007-09 |
920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2007-09 |
Compact and efficient green VECSEL based on novel optical end-pumping scheme |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2007-08 |
Effect of heat spreader location on lasing properties of end-pumped vertical-external-cavity surface-emitting lasers |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
| 2007-04 |
Effect of the properties of an intracavity heat spreader on second harmonic generation in vertical-external-cavity surface-emitting laser |
JOURNAL OF APPLIED PHYSICS
|
| 2007-03 |
Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2007-02 |
Efficient blue lasers based on gain structure optimizing of vertical-external-cavity surface-emitting laser with second harmonic generation |
JOURNAL OF APPLIED PHYSICS
|
| 2007-01 |
Highly efficient green VECSEL with intra-cavity diamond heat spreader |
ELECTRONICS LETTERS
|
| 2006-11 |
A measurement of modal gain profile and its effect on the lasing performance in vertical-external-cavity surface-emitting lasers |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2006-10 |
End-pumped green and blue vertical external cavity surface emitting laser devices |
APPLIED PHYSICS LETTERS
|
| 2006-09 |
9.1-W high-efficient continuous-wave end-pumped vertical-external-cavity surface-emitting semiconductor laser |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2006-09 |
Gain structure optimization of vertical external cavity surface emitting laser at 920 nm |
APPLIED PHYSICS LETTERS
|
| 2006-02 |
Realization of high-power highly efficient GaInP/AlGaInP ridge laser diodes for recordable/rewritable digital versatile discs |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
| 2006-02 |
1060 nm vertical-external-cavity surface-emitting lasers with an optical-to-optical efficiency of 44% at room temperature |
APPLIED PHYSICS LETTERS
|
| 2006-01 |
Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060 nm |
JOURNAL OF CRYSTAL GROWTH
|
| 2005-12 |
Efficient method and layer design for calibrating compositions and growth rates of AlGaInP layers in 660-nm laser diodes grown by MOCVD |
JOURNAL OF CRYSTAL GROWTH
|
| 2005-09 |
Formation of vertical ridge structure in 660 nm laser diodes for high power single mode operation |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2005-07 |
High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2005-03 |
660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle |
IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 2004-08 |
Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs |
JOURNAL OF APPLIED PHYSICS
|
| 2003-02 |
Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE |
JOURNAL OF CRYSTAL GROWTH
|
| 2003-01 |
Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2003-01 |
Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy |
PHYSICAL REVIEW B
|
| 2002-07 |
Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates |
MICROELECTRONICS JOURNAL
|
| 2002-03 |
Confirmation of the pyroelectric coefficient of strained InxGa1-xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy |
JOURNAL OF APPLIED PHYSICS
|
| 2001-07 |
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates |
JOURNAL OF APPLIED PHYSICS
|
| 2001-01 |
MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates |
JOURNAL OF CRYSTAL GROWTH
|
| 2000-01 |
Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy |
APPLIED PHYSICS LETTERS
|
| 2000-01 |
MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates |
JOURNAL OF CRYSTAL GROWTH
|
| 1999-01 |
Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAs |
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
|
| 1999-01 |
Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates |
MICROELECTRONICS JOURNAL
|
| 1998-01 |
Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE |
COMPOUND SEMICONDUCTORS 1997 Book Series: INSTITUTE OF PHYSICS CONFERENCE SERIES
|
| 1998-01 |
Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (111)A substrates by metal organic vapor phase epitaxy |
JOURNAL OF CRYSTAL GROWTH
|
| 1995-01 |
MOSSBAUER STUDY OF NI-X(CU0.5FE0.5)(1-X)CR2S4 |
SOLID STATE COMMUNICATIONS
|
| 1995-01 |
CRYSTALLOGRAPHIC AND MAGNETIC-PROPERTIES OF ANTIFERROMAGNETIC CU0.5FE0.5RH2S4 |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|